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Leveraging the reciprocal-space proximity effect between superconducting bulk and topological surface states (TSSs) offers a promising way to topological superconductivity. However, elucidating the mutual influence of bulk and TSSs on topological superconductivity remains a challenge. Here, we report pioneering transport evidence of a thickness-dependent transition from conventional to unconventional superconductivity in 2M-phase WS2 (2M-WS2). As the sample thickness reduces, we see clear changes in key superconducting metrics, including critical temperature, critical current, and carrier density. Notably, while thick 2M-WS2 samples show conventional superconductivity, with an in-plane (IP) upper critical field constrained by the Pauli limit, samples under 20 nm exhibit a pronounced IP critical field enhancement, inversely correlated with 2D carrier density. This marks a distinct crossover to unconventional superconductivity with strong spin-orbit-parity coupling. Our findings underscore the crucial role of sample thickness in accessing topological states in 2D topological superconductors, offering pivotal insights into future studies of topological superconductivity. 

Abstract The investigation of exotic properties in two-dimensional (2D) topological superconductors has garnered increasing attention in condensed matter physics, particularly for applications in topological qubits. Despite this interest, a reliable way of fabricating topological Josephson junctions (JJs) utilizing topological superconductors has yet to be demonstrated. Controllable structural phase transition presents a unique approach to achieving topological JJs in atomically thin 2D topological superconductors. In this work, we report the pioneering demonstration of a structural phase transition from the superconducting to the semiconducting phase in the 2D topological superconductor 2M-WS₂. We reveal that the metastable 2M phase of WS₂remains stable in ambient conditions but transitions to the 2H phase when subjected to temperatures above 150 °C. We further locally induced the 2H phase within 2M-WS₂nanolayers using laser irradiation. Notably, the 2H phase region exhibits a hexagonal shape, and scanning tunneling microscopy uncovers an atomically sharp crystal structural transition between the 2H and 2M phase regions. Moreover, the 2M to 2H phase transition can be induced at the nanometer scale by a 200 kV electron beam. The electrical transport measurements further confirmed the superconductivity of the pristine 2M-WS₂and the semiconducting behavior of the laser-irradiated 2M-WS₂. Our results establish a novel approach for controllable topological phase change in 2D topological superconductors, significantly impacting the development of atomically scaled planar topological JJs. 

Abstract Effective control of magnetic phases in two-dimensional magnets would constitute crucial progress in spintronics, holding great potential for future computing technologies. Here, we report a new approach of leveraging tunneling current as a tool for controlling spin states in CrI₃. We reveal that a tunneling current can deterministically switch between spin-parallel and spin-antiparallel states in few-layer CrI₃, depending on the polarity and amplitude of the current. We propose a mechanism involving nonequilibrium spin accumulation in the graphene electrodes in contact with the CrI₃layers. We further demonstrate tunneling current-tunable stochastic switching between multiple spin states of the CrI₃tunnel devices, which goes beyond conventional bi-stable stochastic magnetic tunnel junctions and has not been documented in two-dimensional magnets. Our findings not only address the existing knowledge gap concerning the influence of tunneling currents in controlling the magnetism in two-dimensional magnets, but also unlock possibilities for energy-efficient probabilistic and neuromorphic computing. 

Abstract Transition metal dichalcogenide (TMD) heterostructures are promising for a variety of applications in photovoltaics and photosensing. Successfully exploiting these heterostructures will require an understanding of their layer-dependent electronic structures. However, there is no experimental data demonstrating the layer-number dependence of photovoltaic effects (PVEs) in vertical TMD heterojunctions. Here, by combining scanning electrochemical cell microscopy (SECCM) with optical probes, we report the first layer-dependence of photocurrents in WSe 2 /WS 2 vertical heterostructures as well as in pristine WS 2 and WSe 2 layers. For WS 2 , we find that photocurrents increase with increasing layer thickness, whereas for WSe 2 the layer dependence is more complex and depends on both the layer number and applied bias ( V b ). We further find that photocurrents in the WSe 2 /WS 2 heterostructures exhibit anomalous layer and material-type dependent behaviors. Our results advance the understanding of photoresponse in atomically thin WSe 2 /WS 2 heterostructures and pave the way to novel nanoelectronic and optoelectronic devices. 

CrBr 3 is a layered van der Waals material with magnetic ordering down to the 2D limit. For decades, based on optical measurements, it is believed that the energy gap of CrBr 3 is in the range of 1.68–2.1 eV. However, controversial results have indicated that the band gap of CrBr 3 is possibly smaller than that. An unambiguous determination of the energy gap is critical to the correct interpretations of the experimental results of CrBr 3 . Here, we present the scanning tunneling microscopy and spectroscopy (STM/S) results of CrBr 3 thin and thick flakes exfoliated onto highly ordered pyrolytic graphite (HOPG) surfaces and density functional theory (DFT) calculations to reveal the small energy gap (peak-to-peak energy gap to be 0.57 ± 0.04 eV; or the onset signal energy gap to be 0.29 ± 0.05 eV from d I /d V spectra). Atomic resolution topography images show the defect-free crystal structure and the d I /d V spectra exhibit multiple peak features measured at 77 K. The conduction band – valence band peak pairs in the multi-peak d I /d V spectrum agree very well with all reported optical transitions. STM topography images of mono- and bi-layer CrBr 3 flakes exhibit edge degradation due to short air exposure (∼15 min) during sample transfer. The unambiguously determined small energy gap settles the controversy and is the key in better understanding CrBr 3 and similar materials. 

Abstract 2D van der Waals (vdW) magnets with layer‐dependent magnetic states and/or diverse magnetic interactions and anisotropies have attracted extensive research interest. Despite the advances, a notable challenge persists in effectively manipulating the tunneling anisotropic magnetoresistance (TAMR) of 2D vdW magnet‐based magnetic tunnel junctions (MTJs). Here, this study reports the novel and anomalous tunneling magnetoresistance (TMR) oscillations and pioneering demonstration of bias and gate voltage controllable TAMR in 2D vdW MTJs, utilizing few‐layer CrPS₄. This material, inherently an antiferromagnet, transitions to a canted magnetic order upon application of external magnetic fields. Through TMR measurements, this work unveils the novel layer‐dependent oscillations in the tunneling resistance for few‐layer CrPS₄devices under both out‐of‐plane and in‐plane magnetic fields, with a pronounced controllability via gate voltage. Intriguingly, this study demonstrates that both the polarity and magnitude of TAMR in CrPS₄can be effectively tuned through either a bias or gate voltage. The mechanism behind this electrically tunable TAMR is further elucidated through first‐principles calculations. The implications of the findings are far‐reaching, providing new insights into 2D magnetism and opening avenues for the development of innovative spintronic devices based on 2D vdW magnets.